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EPC2045 100V GaN-on-Silicon Transistor

3 490 €

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Couv flyer EPC2045

Take a look at the fifth generation of EPC’s low voltage transistor

The low voltage GaN device market is increasingly important, and Efficient Power Conversion Corporation (EPC) is a major player in low voltage GaN-on-silicon high-electron-mobility transistor (HEMT) devices. 100V GaN HEMTs are a very new technology but they already compete with silicon transistors, especially in the field of megahertz high frequency applications. 

System Plus Consulting has investigated the company’s EPC2045 device, its latest driving 100V for applications such as single-stage 48V converters, USB-C data and power connectors, LiDAR sensors, point-of-load converters and loads in open rack server architectures.

Yole EPC2045 GaN on Silicon Transistor 100V System Plus Consulting


With its new transistor and GaN epitaxy design, the EPC2045 achieves a breakdown voltage of 100V for a current of 16A at 25°C, and a very low RdsOn on-resistance of 7mΩ compared to the previous generation.

The chip-scale packaging of EPC products reduces the final device cost and decreases its inductance, bringing advantages not only with respect to competitors in GaN, but also silicon.  

Compared to silicon transistors, GaN process developments have significantly lowered capacitance. This translates into lower gate drive losses and lower device switching losses at higher frequencies for the same on-resistance and voltage rating.

Yole EPC2045 GaN on Silicon Transistor 100V System Plus Consulting2

Based on a complete teardown analysis, the report also provides an estimation of the production cost of the epitaxy and the package

The report also compares the new product with previous EPC devices and epitaxy and GaN Systems, Transphorm, Panasonic and Texas Instruments packaging. This comparison highlights the differences in design and manufacturing processes and their impact on device size and production cost.

Finally, the report shows a comparison between the standard 100V silicon MOSFETs and the EPC GaN-on-silicon HEMT.

Yole EPC2045 GaN on Silicon Transistor 100V System Plus Consulting3



Table of contents

Overview / Introduction

> Executive Summary
> Reserve Costing Methodology


Company Profile

> EPC 


Physical Analysis

> Summary of the Physical Analysis
- Package analysis
- Package opening
- Package cross-section

> FET Die
- FET die view and dimensions
- FET die process
- FET die cross-section
- FET die process characteristic

> Transistor Manufacturing Process
- FET die front-end process 
- FET die fabrication unit
- Final test and packaging fabrication unit








































Cost Analysis 

> Summary of the Cost Analysis
> Yields Explanation and Hypotheses
> FET Die

- FET front-end cost
- FET die probe test, thinning and dicing
- FET wafer cost
- FET die cost

> Complete Device
> Packaging Cost
> Final test Cost



Price Analysis

> Estimation of Selling Price



> Comparison of Epitaxy in GaN
> Comparison of Packaging of GaN Transistors
> Comparison Between 100V GaN-on-Silicon HEMT and Silicon MOSFETs




About the authors


System Plus Consulting specializes in the cost analysis of electronics, from semiconductor devices to electronic systems. Created more than 20 years ago, System Plus Consulting has developed a complete range of services, costing tools and reports to deliver in-depth production cost studies and estimate the objective selling price of a product. System Plus Consulting engineers are experts in Integrated Circuits - Power Devices & Modules - MEMS & Sensors - Photonics – LED - Imaging – Display - Packaging - Electronic Boards & Systems.

Through hundreds of analyses performed each year, System Plus Consulting offers deep added-value reports to help its customers understand their production processes and determine production costs. Based on System Plus Consulting’s results, manufacturers are able to compare their production costs to those of competitors.

System Plus Consulting is a sister company of Yole Développement.

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  • Detailed photos and identification
  • Scanning electron microscope and energy-dispersive X-ray analysis of epitaxy layers and transistor structure
  • Manufacturing process flow
  • In-depth economic analysis
  • Manufacturing cost breakdown
  • Selling price estimation
  • Comparison with Transphorm, GaNSystems, Texas Instruments and Panasonic devices
  • Comparison with 100V silicon MOSFETs