GaN RF devices market will double over the next five years, led by GaN’s adoption across various market segments.
The GaN RF market enjoyed a healthy increase in 2015
2015 was a significant year for the GaN RF industry, with a dramatic increase in wireless infrastructure market sales driven by the massive adoption of LTE networks in China. By year’s end, the total RF GaN market was close to $300M.
Sales will likely not soar as high over the next two years, but growth will continue, mainly driven by increased adoption of GaN technology in the wireless infrastructure and defense markets. A significant boost will occur around 2019 – 2020, led by the implementation of 5G networks. Market size will be multiplied by 2.5 by the end of 2022, posting a CAGR of 14% from 2016 - 2022.
This report describes GaN’s presence and development scheme in different markets, including wireless infrastructure, defense and aerospace, satellite communication, wired broadband (CATV and FTTH), and other ISM band applications, and offers a complete analysis covering different emerging GaN players (i.e. Sumitomo Electric, Wolfspeed, Qorvo, M-A/COM, Microsemi, UMS, NXP, Ampleon, RFHIC, Mitsubishi Electric, Northrop Grumman, and Anadigics) and more than 600 GaN devices developed and implemented in such applications as radar, base transceiver station, CATV, VSAT, and jammers. This report also includes a detailed analysis of these companies and their products across different applications.
The wireless infrastructure and defense markets offer great opportunities for GaN
Wireless infrastructure, having surpassed defense and now representing more than half of GaN’s total market, will continue growing fast at an expected 16% CAGR for 2016 – 2022. Though GaN was originally developed to support governmental military and space projects, we’ll soon be able to say that mainstream commercial markets have fully embraced this novel technology.
GaN’s increased implementation in base stations and wireless backhaul stems from the growing demand for data traffic and higher operating frequencies and bandwidths. In future network designs, new technologies like carrier aggregation and massive MIMO will actually put GaN in a superior position compared to existing LDMOS. GaN products have not yet covered the wireless infrastructure market’s full spectrum, and we see more opportunities in the higher-frequency range.
When looking at different players’ products, most GaN players offer similar products for base station applications ranging from 800MHz - 3.5 GHz. The competition will no doubt grow fiercer, and the cake, even if it’s a fast-growing one, will not be divided equally for everyone. In 2016, new entrants like Infineon and possibly another LDMOS player will bring more uncertainty.
In the meantime, defense remains another important market for GaN, and more and more new products and designs are benefiting from GaN’s superior performance and design simplification. We predict a steadily-growing penetration rate for GaN in defense market applications like IED jammers, military communications, radar, electronic warfare, and more.
We invite you to read our report and discover more details about the wireless infrastructure and defense markets, as well as other applicative markets like CATV and satellite communication.
Two existing technologies will make peace and then go their separate ways: GaN-on-SiC and GaN-on-Silicon’s current position and future market trend
In terms of GaN transistor types, GaN-on-SiC is present in more than 95% of total commercial devices using GaN. GaN-on-SiC’s maturity has led it to dominate GaN-on-Silicon at present, and most GaN RF implementations are realized with GaN-on-SiC devices.
GaN-on-SiC is an appealing choice for markets that require higher performance and are less cost-sensitive, and many companies choose GaN-on-SiC for their new designs and products. Meanwhile, LDMOS and GaAs remain the main technologies used for high-volume applications with lower performance requirements.
But the door hasn’t closed on GaN-on-Silicon. MA-COM is pushing its GaN-on-Silicon products and just announced its Gen4 GaN product for base stations, with an LDMOS-like cost structure. From 2016 - 2020, Yole envisions opportunities for GaN-on-Silicon in commercial markets like LTE, SATCOM terminals, CATV, and RF energy, with GaN-on-SiC still the go-to technology for GaN RF. The situation could change drastically, but for now GaN-on-Silicon remains a challenger to the incumbent GaN-on-SiC solution.
This report covers several different scenarios and their potential impact on the overall GaN RF market and its players.
WHat's new compraed to last edition
- Analysis of different scenarios related to GaN-on-SiC and GaN-on-Si developments beyond 2020
- Updated technology trends analysis across different markets
- Product and foundry service analysis for RF GaN players
- Product analysis in different applicative markets
- Business model analysis and comparison between different players
- Major M&As during 2014/15, their context, and new entrants
Objectives of the Report
- Provide an overview of the entire GaN RF market.
- Analyze different players in different markets, along with their product range and technologies.
- Outline market access -- from wafer suppliers to device makers and system manufacturers.
- Highlight the main technologies in the different RF GaN markets.
- Identify the key drivers that offer opportunities for GaN development.
- Explain the needs of different RF markets and the corresponding impact on the needs for GaN technologies, along with geographical specificities.