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GaN Systems GS61004B GaN HEMT

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SP18391 GaN Systems GS61004B couv flyer

Discover how GaN Systems has designed its high-current, low-voltage PCB embedded GaN-on-Si transistor.

There are only two main players in low--voltage GaN: EPC and GaN Systems, a fact mainly due to the complexity of using a standard package with low losses. GaN Systems wants to compete with EPC, the market leader, in the low-voltage HEMT market. System Plus Consulting unveils the GS61004B from GaN Systems, the latest device driving 100V and optimized for AC-DC converters and high-frequency, high-efficiency power conversion.

SP18391 GaN Systems GS61004B couv

The GS61004B from GaN Systems is a GaN-on-silicon HEMT transistor packaged in the GaNpx embedded die package. This embedded die package is unique to the market in that it allows for high current capability. The GS61004B has a die size of around 4 mm2 and carries up to 45A, which means more than 10A/mm², almost 3x higher than the competition.
The GS61004B is packaged in an innovative embedded die package developed by AT&S (ECP® process). This package has no wire bonding, which reduces inductance, and its design increases heat management. The die’s new position in the package facilitates

enhanced thermal dissipation, and a simplification of the process reduces manufacturing time and cost.
Based on a complete teardown analysis, this report also provides an estimated production cost for the epitaxy and the package. Moreover, this report compares standard 100V Si MOSFETs and low-voltage GaN on Si HEMT.


SP18391 GaN Systems GS61004B 3   

Table of contents


> Executive Summary

> Reverse Costing Methodology



Company Profile

> GaN Systems

> Products



Physical Analysis

> Summary of the Physical Analysis

> Package Analysis

- Package opening

- Package cross-section

> HEMT Die

- HEMT die view and dimensions

- HEMT die process

- HEMT die cross-section

- HEMT die process characteristics



Physical Analysis

> HEMT Die Front-End Process

> HEMT Die Fabrication Unit

> Final Test and Packaging Fabrication Unit

Cost Analysis

> Cost Analysis - Summary

> Yields Explanation and Hypotheses

> HEMT Die

- HEMT front-end cost

- HEMT die probe test, thinning and dicing

- HEMT wafer cost

- HEMT die cost

> Complete Device

- Packaging cost

- Final test cost



Price Analysis

 > Complete Device




> Comparison of GaN Systems’ Devices

> Comparison of GaN Systems and EPC 100V HEMT

> Comparison between 100V GaN-on-Si and Si MOSFET




























About the authors


System Plus Consulting specializes in the cost analysis of electronics, from semiconductor devices to electronic systems.

Created more than 20 years ago, System Plus Consulting has developed a complete range of services, costing tools and reports to deliver in-depth production cost studies and estimate the objective selling price of a product.

System Plus Consulting engineers are experts in:

  • Integrated Circuits 
  • Power Devices & Modules 
  • MEMS & Sensors
  • Photonics 
  • LED 
  • Imaging 
  • Display 
  • Packaging 
  • Electronic Boards & Systems.

Through hundreds of analyses performed each year, System Plus Consulting offers deep added-value reports to help its customers understand their production processes and determine production costs. Based on System Plus Consulting’s results, manufacturers are able to compare their production costs to those of competitors.

System Plus Consulting is a sister company of Yole Développement.

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  • Detailed photos and identification

  • SEM & EDX analysis of epitaxy layers and transistor structure

  • Manufacturing process flow

  • In-depth economic analysis

  • Manufacturing cost breakdown

  • Sales price estimate

  • Comparison with Transphorm, EPC, TI, and Panasonic devices

  • Comparison with 100V Si MOSFET

Comparison of both Samsung Galaxy S9 processor packages: Samsung Exynos 9810 with new TMV Package-on-Package vs. Qualcomm Snapdragon 845 with MCeP Packaging.


Discover how GaN Systems has designed its high-current, low-voltage PCB embedded GaN-on-Si transistor.