DescriptionThe first 1700V super junction NPN bipolar transistor from GeneSIC: “Super-High” current gain bipolar transistor compatible with standard MOSFET/IGBT Drivers
The Super Junction Transistors SiC are targeted for power switching applications and offer a better power efficiency. The first generation GeneSIC transistor has several new features.
First, with a current density 4-5 times higher than a silicon transistor, this SIC transistor is a very interesting economical solution.
Second, the Ga08JT1700 is a super high current gain BJT, β=40. A low gate current is necessary to drive it. This is why a standard commercial IGBT/MOSFET driver can be used.
Third, the emitter and the collector regions are designed to reduce the minority carrier diffusion in order to obtain a high frequency.
Fourth, this transistor is designed for an operating temperature of 175°C maximum.
This report provides a reverse costing analysis with:
• Detailed photos & Material analysis
• SCM analysis
• Step by step manufacturing Process Flow
• Cost breakdown by process steps
• Final manufacturing cost & Selling price estimation
Table of contents
|1. Overview / Introduction
> Executive Summary
2. Companies Profile
> GeneSiC Profile
3. GA08JT17-247 Characteristics
4. GA08JT17-247 Physical Analysis
> Package Views & Dimensions
> Die View, Dimensions & Marking
> Guard Ring
> Metal Layers
> Oxide Layers
> Gate Cross-Section
> Source Cross-Section
> Substrate and Epitaxy Layers
> SJT BJT Characteristics
| 5. Manufacturing Process Flow
> Global Overview
> GA08JT17 Epitaxy Unit
> GA08JT17 Front end Unit
> GA08JT17 Tests Unit
> Transistor Process Flow
> Transistor Process Flow
6. Cost Analysis
> Synthesis of the cost analysis
> Yields Hypotheses
> GA08JT17 Epitaxy Cost
> GA08JT17 Front-End Cost
> GA08JT17 Wafer Cost
> GA08JT17 Cost per process steps
> GA08JT17 : Equipment Cost per Family
> GA08JT17 : Material Cost per Family
> Back-End : Probe and Final Test Cost
> GA08JT17 -247 Cost & Price
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