Panasonic’s first 600V GaN HEMT has an innovative structure designed to integrate a normally-off transistor in a standard package, without a cascode structure
System Plus Consulting unveils Panasonic’s first GaN HEMT, assembled in a standard TO220 package. Thanks to its specific die design, the component is normally-off without using a cascode structure or special packaging.
Panasonic’s PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.
The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.
Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.
Moreover, this report offers a comparison with GaN Systems’ GS66504B and Transphorm’s GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.
Overview / Introduction
Executive summaryReverse costing methodology
Synthesis of the physical analysisPackage analysis> Package opening> Package cross-sectionHEMT die> HEMT die view & dimensions> HEMT die process > HEMT die cross-section> TEM epitaxy analysis> HEMT die process characteristics
HEMT Manufacturing Process
HEMT die front-end processHEMT die fabrication unitFinal test & packaging fabrication unit
Synthesis of the cost analysisYield explanations and hypothesesHEMT die > HEMT die front-end cost> HEMT die probe test, thinning, and dicing> HEMT die wafer cost> HEMT die cost> Wafer cost evolution> Die cost evolutionComplete HEMT> Assembly cost> Synthesis of the assembly> Component cost
Estimated sales price
Comparison between Transphorm and GaN Systems’ HEMT
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System Plus Consulting is a sister company of Yole Développement.
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Detailed photos and identification
SEM analysis of epitaxy layers and transistor structure
TEM & EDX analysis of epitaxy layers
Manufacturing process flow
In-depth economics analysis
Manufacturing cost breakdown
Comparison with devices from Transphorm and GaN Systems