With 5G implementation coming, RF GaN market is developing fast.
A THREEFOLD INCREASE OVER THE NEXT FIVE YEARS
In the last couple of years, the radiofrequency (RF) GaN market experienced impressive growth and has reshaped the RF power industry landscape. By the end of 2017, the total RF GaN market was close to $380M. The penetration rate in various markets, and in particular telecom and defense applications, had a breakout period in the last two years. The compound annual growth rate (CAGR) in these two markets is more than 20%. Another significant boost will occur around 2019–2020, led by the implementation of 5G networks. The total RF GaN market size will be a factor of 3.4 larger by the end of 2023, posting a 22.9% CAGR from 2017-2023. This report describes GaN’s presence and development in different markets, including wireless infrastructure, defense and aerospace, satellite communication, wired broadband, both in coaxial cables used in cable TV (CATV) and fiber-to-the-home, and other industrial, scientific and medical (ISM) radio band applications. It also offers a complete analysis covering different emerging GaN players such as Sumitomo Electric, Wolfspeed, Qorvo, M-A/COM, UMS, NXP, Ampleon, RFHIC, Mitsubishi Electric, Northrop Grumman, and Anadigics. The report looks at GaN devices developed and implemented in applications spanning radar, base transceiver stations, CATV, very small aperture terminal (VSAT) satellite ground stations, and jammers. We invite you to read our report and discover more details about the wireless infrastructure and defense markets, as well as other applicative markets such as CATV and satellite communication.
TELECOM AND DEFENSE MARKETS ARE THE DRIVING FORCE
Yole Développement envisions telecom and defense markets acting as the mainstay of the industry. The telecom market, thanks to the increasing development pace of 5G networks, will bring a huge opportunity for GaN devices beginning in 2018. Compared to existing silicon LDMOS and GaAs solutions, GaN devices are able to deliver the power/efficiency level required for next generation high frequency telecom networks. Also, GaN’s broadband capability is one of the key elements for enabling important new technologies, such as multi-band carrier aggregation. GaN HEMTs have been the candidate technology for future macro base station power amplifiers. Yole Développement estimates most sub-6GHz macro network cell implementation will use GaN devices because LDMOS can no longer hold up at such high frequencies and GaAs is not optimum for high power applications. However, because small cells do not need such high power existing technology like GaAs still has advantages. At the same time,market volumes will increase faster because higher frequencies reduce the coverage of each base station, and thus more transistors will be implemented. The defense market has been the major driving force for GaN development in the past decades. Originating in the US Department of Defense, GaN devices have been implemented in new generation aerial and ground radars. GaN’s high power capability improves detection range and resolution, and designers are becoming increasingly familiar with this new technology. Nevertheless, this military-related technology is very sensitive. And as GaN devices are becoming popular in defense applications, the development of the nonmilitary part could be affected. This is especially true in terms of mergers and acquisitions. Governments could block deals if businesses target military applications, as in Aixtron’s acquisition by FGC Investment Fund, or Wolfspeed’s by Infineon. We invite you to read our report and discover more details about the wireless infrastructure and defense markets, as well as other applications like wired network and satellite communication.
WHICH IS THE RIGHT WAY TO DEVELOP: INTEGRATED OR FOUNDRY-BASED MANUFACTURING? GaN-ON-SiC OR GaN-ON-SILICON?
After decades of development, GaN technology is now accessible across different continents. Leading players include Sumitomo Electric, Wolfspeed (Cree), Qorvo, as well as many other players in US, Europe and Asia. Compound semiconductors differ from the traditional silicon-based semiconductor industry. The epitaxy process is much more important than conventional silicon processes, affecting the quality of the active region, with a huge impact on device reliability. That’s the reason why today leading companies are strong in these processes and would love to have internal production capacity, keeping technology know-how secret. Nevertheless, fabless design houses are developing very fast with their foundry partners to provide GaN technology. With their good relationship and sales channels, leading players like NXP and Ampleon might change the competitive landscape.At the same time, there are also two competing technologies in the market: GaN-on-SiC and GaN-on-silicon. They use different materials as their substrates but share similar characteristics. In the theory, GaN-on-SiC has better performance and today most players are using this technology. However, companies like M/A-COM are pushing GaN-on-Silicon to be implemented in various applications. It is still early, but for now GaN-on-silicon remains a challenger to the incumbent GaN-on-SiC solution. Our previous report covered several different scenarios and their potential impact on the overall RF GaN market and its players. In this new version we develop different scenarios, and present a new perspective on the market’s size.
Objectives of the Report
- Provide an overview of the RF GaN market
- Analyze different players in different markets, along with their product range and technologies
- Outline market access/market size evolution from 2017–2023 broken down by technology
- Highlight the main technologies in the different markets
- Explain the needs of different RF markets and the corresponding impact on the needs for different technologies, along with geographical considerations
- Update of our RF GaN report with newest market developments and technology trends
- Discussion about GaN-on-SiC and GaN-on-silicon market development
- Technology development in different RF GaN markets and the competitive landscape
- Main RF power players and their technology development status
- Different business models in the industry