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Toshiba TL1L4-WH0 3rd gen GaN on Silicon LED
Jul.2015

toshiba_led_gan_on_si_icon
2 990 €

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Description

Toshiba LED GaN on Si flyerFirst high brightness LED GaN-on-Silicon with 160lm per watt, almost equivalent to sapphire LED Base

Toshiba has completely changed its technology to multiply by 2 the brightness of their GaN-on-silicon LEDs. Today the Toshiba white LEDs have characteristics close to the classic sapphire LED with a smaller cost. The large panel of products and packages available todaya shows the maturity of Toshiba products and their willing to conquer the white LED market.

With a footprint of 3.5x3.5mm, the TL1L4-WH0 from Toshiba is tiny and benefits of the last package innovations like the sintering and a SMD leadframe with ceramic substrate and take full benefit of strong innovations. The TL1L4 LED are produced on a cheap 8” silicon substrate in a standard power silicon facility from Toshiba.

The integration in a standard facility has been facilitate by a gold-free smart bonding process. A significant work has been done on the epitaxial layer in GaN to enhance the brightness. In 18 months, the brightness has been multiplied by 2. The optimization of the GaN epitaxy is the core of this amazing improvement. Moreover, all the manufacturing process has been enhanced to reach this brightness.

Today the Toshiba white LEDs are similar to the last sapphire LEDs with a vertical thin film with via structure. The report includes a detailed technology and a cost analysis describing the  innovations of Toshiba and a comparison with the first generation Toshiba LED. LED on silicon can now compete against LED on Sapphire.

Toshiba LED GaN on Si img
COMPLETE TEARDOWN WITH:

  •  Detailed Photos
  •  Precise Measurements
  •  Material Analysis
  •  Manufacturing Process Flow
  •  Supply Chain Evaluation
  •  Comparison with Toshiba TL1F1
  •  Manufacturing Cost Analysis
  •  Selling Price Estimation
 

Table of contents

Overview / Introduction


Toshiba Company Profile


Physical Analysis


> Physical Analysis Methodology

> Package
  • Physical Analysis Methodology
  • Package Views & Dimensions
  • Package Opening
  • Package X-Ray
  • Package Cross-Section
  • Phosphor
  • Protective diode


  • > LED
  • LED Views & Dimensions
  • Cathode
  • Anode
  • Epitaxy
  • LED Thickness
  • LED Characteristics

> Comparison TL1L4 and TL1F1
Manufacturing Process Flow


Global Overview


> LED Fabrication Unit
> LED Process Flow
> Package Fabrication Unit
> Package Process Flow

Cost Analysis


> Synthesis of the cost analysis
> Main steps of economic analysis
> Yields Hypotheses
> Epitaxy Step
> LED Epitaxy Cost
> LED Front-End Cost
> LED Wafer Cost
> LED Cost per process steps
> LED Equipment Cost per Family
> LED Material Cost per Family
> Back-End : Probe and cleaving Cost
> Packaging Cost
> Packaging Cost
> Final Assembly Cost
> Component Cost

Price Analysis

> Price definitions
> Manufacturers financial ratios 
> Manufacturing Price with Binning

 


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Headquartered in Nantes, France, System Plus Consulting is specialized in technology and cost analysis of electronic components and systems. During our 20 years in business, we have built and refined detailed cost models as the primary tools for hundreds of analyses. The highly qualified System Plus cost engineers combine broad and deep skills in semiconductor and electronics technologies with years of experience in cost modeling.

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− Custom reverse costing analyses: technology analysis followed by cost evaluation
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System Plus Consulting analyzes any type of electronic devices and systems, with a special focus on semiconductor technologies. Major fields of technology and cost expertise are:
− Integrated Circuits
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Our analyses are used by Purchasing Departments to measure their suppliers’ cost structure, R&D Departments to confirm technological choices depending on their impact on costs, and Benchmarking/Marketing Departments to monitor the products on the market.

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