Transphorm’s new die design for its TPH3206PS GaN HEMT halves the cost per ampere compared to the previous model
Overview / Introduction
Company profile & Supply Chain
> Synthesis of the Physical Analysis> Package Analysis- View and dimensions and marking- Package opening- Package cross-section> GaN on Silicon HEMT Analysis- Dimension and marking- Details and delayering- Cross-section, SEM view> Resistor Analysis- Dimension- Details and process- Cross- section> Silicon MOSFET- Dimension- Details- Cross-section
Manufacturing Process Flow
> GaN HEMT Process Flow and Fabrication Units> Resistor Process Flow and Fabrication Units> MOSFET Process Flow and Fabrication Units> Package Process Flow
> Synthesis of the Cost Analysis> Main Steps of Economic Analysis> Yields Explanation> Cost Analysis GaN HEMT- GaN HEMT wafer cost- Breakdown per process step- Back-end cost- GaN HEMT die cost> Resistor Cost Analysis- Resistor wafer cost- Breakdown per process step- Resistor die cost> MOSFET Cost Analysis- MOSFET wafer cost- Back-end cost- MOSFET die cost> TPH3206PS Cost Analysis- Assessing BOM- DBC cost- TPH3206PS module cost
Estimated Manufacturer Price Analysis
> Manufacturers ratios > Estimated manufacturer price
Comparison with Transphorm TPH3002PS
Comparison with GaN System GS66504B
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Manufacturing process flow
Supply chain evaluation
Manufacturing cost analysis
Estimated sales price
Comparison with TPH3002 and GaN Systems’ GS66504B