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UnitedSiC UJN1205K 1200V SiC JFET

3 490 €

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SP18410 UnitedSiC UJN1205K 1200V SiC JFET flyer cover

Discover the technological choices made by United Silicon Carbide Inc. (UnitedSiC) for its most advanced SiC JFET and its associated features.

Silicon carbide-based device penetration is expanding in industrial applications. JFET is one of them. UnitedSiC offers two types of medium-voltage (1200V) SiC JFETs, with the UJN1205K achieving the highest current (38A).

This JFET is marketed as the ideal solution for circuit protection because of its ability to handle peak temperatures and limit current by a rapid decrease due to self-heating. The device also offers a low on-resistance of 45mΩ, but a very high current density of 4.08 A/mm2 at 25°C, thanks in large part to its trench structure with special openings for contacts.

SP18410 Cross section opticalview System Plus

UnitedSiC employs in its JFET structure a unique angled implantation process to improve threshold voltage control, and a silicide for both gate and source contact to boost contact resistance.

Owing to its design, the device’s cost is very competitive regarding its special steps.

Also, the packaging is optimized for cost-savings.

This report presents a deep technology analysis of the UJN1205K device, assembled in a TO247 package. Also included is a production cost analysis, and comparisons with its JFET counterpart from SemiSouth. This comparison highlights the differences in the design technology choices and the electrical/geometrical parameters.


 SP18410 Package optical view System Plus     SP18410 Package opening optical view System Plus














Table of contents


> Executive Summary

> Reverse Costing Methodology

> Glossary

> SiC Power Device Market


Company Profile

> UnitedSiC

> Portfolio

> Supply Chain



Physical Analysis

> Physical Analysis - Summary

> Package Analysis

- Package opening

- Package cross-section

> JFET Die

- JFET die view and dimensions

- JFET delayering and main blocs

- JFET die process

- JFET die cross-section

- JFET die process characteristics

















































Manufacturing Process 

> JFET Die Front-End Process

> JFET Fabrication Unit

> Packaging Process and Fabrication Unit



Cost Analysis

> Summary of the Cost Analysis

> Yields Explanation and Hypotheses

> JFET Die

- JFET die front-end cost

- JFET die probe test, thinning and dicing

- JFET die wafer cost

- JFET die cost

> Complete Device

- Assembled components cost

- Assembly summary

- Component cost



Sales Price

Comparison of JFETs from UnitedSiC and SemiSouth

Company Services



About the authors


System Plus Consulting specializes in the cost analysis of electronics, from semiconductor devices to electronic systems.

Created more than 20 years ago, System Plus Consulting has developed a complete range of services, costing tools and reports to deliver in-depth production cost studies and estimate the objective selling price of a product.

System Plus Consulting engineers are experts in:

  • Integrated Circuits 
  • Power Devices & Modules 
  • MEMS & Sensors
  • Photonics 
  • LED 
  • Imaging 
  • Display 
  • Packaging 
  • Electronic Boards & Systems.

Through hundreds of analyses performed each year, System Plus Consulting offers deep added-value reports to help its customers understand their production processes and determine production costs. Based on System Plus Consulting’s results, manufacturers are able to compare their production costs to those of competitors.

System Plus Consulting is a sister company of Yole Développement.

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  • Detailed photos

  • Precise measurements

  • Material analysis

  • Manufacturing process flow

  • Supply chain evaluation
  • Manufacturing cost analysis

  • Estimated sales price

  • Comparison with previous SiC JFET