Sanan IC, a Chinese compound semiconductor foundry, has announced its entry into the North American, European, and Asia Pacific (APAC) markets with a broad portfolio of GaAs HBT, pHEMT, BiHEMT, integrated passive device (IPD), filters, GaN power HEMT, SiC, and InP DHBT process technologies. Sanan IC is strongly focused on high performance, large scale, and high quality III-V semiconductor manufacturing and on serving the RF, millimeter wave, power electronics, and optical markets.
Founded in 2014, headquartered in Xiamen City, in the Fujian province of south China, Sanan IC is subsidiary of Sanan Optoelectronics, an LED chip manufacturing company, based on GaN and GaAs technologies. Leveraging high volume production and years of investment in numerous epitaxial wafer reactors of its parent company for the LED lighting and solar photovoltaic markets, Sanan IC is expanding itsr go-to-market strategy beyond the Greater China region as their process technologies and patent portfolio mature, with a vision to fulfill the needs of independent design manufacturers (IDM’s) and fabless design houses for high volume compound semiconductor fabrication.
“We see tremendous opportunity in serving the world-wide demand for large scale production of 6-inch III-V epitaxial wafers, driven by continual growth of the RF, millimeter wave, power electronics, and optical markets,” said Raymond Cai,CEO of Sanan IC. “Our vertically integrated manufacturing services over our broad compound semiconductor technology platform, with in-house epitaxy and substrate capabilities, make us an ideal foundry partner. Given the capital investments made on state-of-the art equipment and facilities, with full support from our parent company, Sanan Optoelectronics, combined with strategic partnerships, and a world-class team of scientists and technologists, Sanan IC is well positioned for success in this active compound semiconductor market“.
As cellular mobility and wireless connectivity proliferates in the Internet-of-Things (IoT), and 5G sub-6GHz evolves into millimeter wave, III-V technologies become even more critical to support the infrastructure and client device deployments by carriers worldwide. According to Yole Développement (Yole), the GaAs wafer market, comprised of RF, photonics, photovoltaics, and LEDs, is expected to grow to over 4 million units in 2023, with photonics having the highest growth at 37 percent CAGR1. GaN and SiC for power electronics, such as for data centres, electric vehicles (EVs), battery chargers, power supplies, LiDAR, and audio, are predicted to ramp up, with GaN reaching up to $460M shipments by 2022 with a CAGR of 79 percent while SiC projects to reach $1.4B at 29 percent CAGR by 2023.
Optical components continue to be in high demand for datacom, telecom, consumer, automotive and industrial markets, to increased revenues for photodectors, laser diodes, and especially VCSELs with expected shipments of $3.5B in 2023. As these applications emerge, Sanan IC is poised to support the industry’s needs.