Sanan IC expands foundry manufacturing services for the global optical market

SANAN INTEGRATED CIRCUIT (Sanan IC), a world-class wafer foundry with an advanced compound semiconductor technology platform, announced the worldwide expansion of its optical portfolio. Using the most advanced materials and foundry supply network, Sanan IC will provide the global optical market with large-scale foundry services for customized vertical-cavity surface-emitting lasers (VCSEL) and arrays, along with standard products for optical communication applications.

Sanan IC’s worldwide launch comes on the heels of lightCounting’s report that the optical transceiver market will rise at a 15% compound annual growth rate (CAGR) from 2020 through 2024. Additionally, Yole Développement (Yole) analysts expect the global 3D imaging and sensing market to expand from $5 billion in 2019 to $15 billion in 2025, at a 20% CAGR during this period.

“Our executive team recognizes the tremendous business opportunities in serving high-growth optical communication and consumer application markets,” says Raymond Cai, CEO of Sanan IC. “Cutting edge optical products and foundry services are paramount to accommodating the rapid adoption of automotive, big data and 5G wireless communications technologies. Sanan IC’s robust supply chain and state-of-the-art technology can meet these demands, which is why we are committed to making our components and services commercially available worldwide.”

With a broad range of wavelengths available in-house, Sanan IC enables fast, cost-effective design and manufacturing of high-power VCSEL lasers, high-speed VCSEL lasers, distributed feedback (DFB) lasers, avalanche photodiodes (APD) and monitor photodiodes (MPD). Experienced engineering teams and the industry’s most advanced process tools make Sanan IC capable of delivering leading turn-key solutions, all while maintaining the highest standards of quality and reliability. With the ability to ensure its supply chain, Sanan IC provides a dedicated capacity for gallium arsenide (GaAs) and indium phosphide (InP) epi growth, and epitaxial wafer fabrication on 2-inch, 4-inch and 6-inch platforms.


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